Electron- or hole-assisted reactions of H defects in hydrogen-bonded KDP.

نویسندگان

  • C S Liu
  • Nicholas Kioussis
  • S G Demos
  • H B Radousky
چکیده

We present an ab initio study of the stability and defect reactions of neutral and charged H interstitial (H(i)) and H vacancy (H(v)) in KH2PO4 (KDP). We find that while there is no interaction between the neutral H(i) and the host, the addition of an electron leads to the ejection of a H host atom and the subsequent formation of an interstitial H2 molecule and a H(v). In sharp contrast, the addition of a hole results in the formation of a hydroxyl bond. Thus, H(i) in both charged states severs the H-bonded network. For the H(v), the addition of a hole leads to the formation of a peroxyl bridge. The neutral H(i) and the positively charged H(v) induce states in the gap. The results elucidate the underlying atomic mechanism for the defect reactions suggested by experiment.

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عنوان ژورنال:
  • Physical review letters

دوره 91 1  شماره 

صفحات  -

تاریخ انتشار 2003